<p>A semiconductor device in which heat generated from a semiconductor element can be removed sufficiently. The semiconductor device (100) comprises a substrate (2) having a bottom face (2b) and an element mounting face (2a) located oppositely to the bottom face (2b), and a semiconductor element (1) having a major surface (1a) being mounted on the element mounting face (2a). The ratio H/L between the length L of the major surface (1a) in the long side direction and the distance H from the bottom face (2b) to the element mounting face (2a) is set not smaller than 3.0. When the semiconductor element is a light emitting element, the element mounting face (2a) becomes a recess (2u) for receiving the element (1) and a metal layer (13) is provided on the surface of the recess (2u). When an electrode (32) for external connection is provided on the major surface (1a), a groove for preventing outflow of the connecting material (34) of the electrode (32) is made in the major surface (1a) at the connecting part on the recess side.</p>
申请公布号
WO2004082034(A1)
申请公布日期
2004.09.23
申请号
WO2004JP02982
申请日期
2004.03.08
申请人
SUMITOMO ELECTRIC INDUSTRIES LTD.;ISHIDU, SADAMU;HIGAKI, KENJIRO;ISHII, TAKASHI;TSUZUKI, YASUSHI