发明名称 Microstructure and method for the production thereof
摘要 The invention relates to a microstructure in a preferably electrically conductive substrate ( 1 ), more specifically made of doped single crystal silicon, with at least one functional unit ( 2.1, 2.2 ) and to a method of fabricating the same. In accordance with the invention, the functional unit ( 2.1, 2.2 ) is mechanically and electrically separated from the substrate ( 1 ) on all sides by means of isolation gaps ( 5, 5 a) and is connected, on at least one site, to a first structure ( 4 a) of an electrically conductive layer (S) that is electrically isolated from the substrate ( 1 ) by way of an isolation layer ( 3 ) and that secures the unit into position relative to the substrate ( 1 ). For this purpose, the functional unit ( 2.1, 2.2 ) is released from the substrate ( 1 ) in such a manner that the isolation gaps ( 5, 5 a) are provided on all sides relative to the substrate ( 1 ). The electrically conductive layer (S) is applied in such a manner that it is connected through contact fingers ( 4 a) for example to the functional unit ( 2.1, 2.2 ) which it secures into position. The method in accordance with the invention permits to substantially facilitate the manufacturing process and to produce a microstructure with but small parasitic capacitances.
申请公布号 US6969628(B2) 申请公布日期 2005.11.29
申请号 US20020296771 申请日期 2002.12.13
申请人 MEMSFAB GMBH 发明人 BERTZ ANDREAS;GESSNER THOMAS;KUECHLER MATTHIAS;KNOEFLER ROMAN
分类号 B81B3/00;B81C1/00;(IPC1-7):H01L21/00 主分类号 B81B3/00
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