发明名称 METHOD FOR FORMING TRENCH ISOLATION STRUCTURE
摘要 Disclosed is a base with siliceous film which is free from voids or cracks inside a groove of a trench isolation structure, and is excellent in adhesion between the base and the siliceous film. Also disclosed is a method for producing such a base with siliceous film. Specifically disclosed is a method for forming a trench isolation structure comprising a step wherein a substrate having a trench isolation groove whose surface is continuously covered with a silicon nitride liner film is coated with a silicon-containing polymer solution and a step wherein the thus-coated substrate is subjected to a heat treatment at a temperature not less than 900‹C and not more than 1200‹C. Also disclosed is a base with siliceous film obtained by using such a method. ® KIPO & WIPO 2007
申请公布号 KR20070028518(A) 申请公布日期 2007.03.12
申请号 KR20077000156 申请日期 2007.01.03
申请人 AZ ELECTRONIC MATERIALS (JAPAN) K.K. 发明人 NAGURA TERUNO;SHIMIZU YASUO;ICHIYAMA MASAAKI
分类号 H01L21/76;H01L21/762;H01L21/205;H01L21/316 主分类号 H01L21/76
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