发明名称 |
METHOD FOR FORMING TRENCH ISOLATION STRUCTURE |
摘要 |
Disclosed is a base with siliceous film which is free from voids or cracks inside a groove of a trench isolation structure, and is excellent in adhesion between the base and the siliceous film. Also disclosed is a method for producing such a base with siliceous film. Specifically disclosed is a method for forming a trench isolation structure comprising a step wherein a substrate having a trench isolation groove whose surface is continuously covered with a silicon nitride liner film is coated with a silicon-containing polymer solution and a step wherein the thus-coated substrate is subjected to a heat treatment at a temperature not less than 900‹C and not more than 1200‹C. Also disclosed is a base with siliceous film obtained by using such a method. ® KIPO & WIPO 2007
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申请公布号 |
KR20070028518(A) |
申请公布日期 |
2007.03.12 |
申请号 |
KR20077000156 |
申请日期 |
2007.01.03 |
申请人 |
AZ ELECTRONIC MATERIALS (JAPAN) K.K. |
发明人 |
NAGURA TERUNO;SHIMIZU YASUO;ICHIYAMA MASAAKI |
分类号 |
H01L21/76;H01L21/762;H01L21/205;H01L21/316 |
主分类号 |
H01L21/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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