发明名称 THIN FILM TRANSISTOR SUBSTRATE AND PRODUCING METHOD THEREOF
摘要 <p>A TFT(Thin Film Transistor) substrate and a producing method thereof are provided to inhibit pattern failures and stably perform coating processes with high productivity. A TFT(Thin Film Transistor) substrate comprises the followings: a substrate(101); gate electrodes(102) which are formed on a flat surface of the substrate so as to be parallel to each other and configured with ring-shaped flat patterns having openings; a gate insulating film(103) formed on gate electrodes; and source electrodes and drain electrodes which are formed on the gate insulating film except flat surface regions, on the gate insulating film, defined as projected shapes of the gate electrodes.</p>
申请公布号 KR20070093323(A) 申请公布日期 2007.09.18
申请号 KR20070006042 申请日期 2007.01.19
申请人 KABUSHIKI KAISHA HITACHI SEISAKUSHO(D/B/A HITACHI, LTD.) 发明人 ANDO MASAHIKO;INOUE TOMOHIRO;ARAI TADASHI;FUJIMORI MASAAKI
分类号 G02F1/136;H01L29/78 主分类号 G02F1/136
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