| 摘要 |
A photoelectric conversion layer stack type solid-state imaging device is provided to detect an incident beam of one of three original colors by a photoelectric conversion layer laid on a semiconductor substrate and detect incident beams of the other two colors passing through the photoelectric conversion layer by a photoelectric conversion element formed on the semiconductor substrate. A signal read circuit(50) which reads a detection signal of the first color pixel includes a reset transistor(13), a row selection transistor(12) and an output transistor(11). A signal read circuit which reads a detection signal of the second color pixel and a signal read circuit which reads a detection signal of the third color pixel include a read transistor, a reset transistor, a row selection transistor and an output transistor, respectively.
|
