DOPING METHOD OF BARRIER REGION IN SEMICONDUCTOR DEVICE

摘要

An exposed active surface is prepared on a major surface of a semiconductor substrate. A source gas containing an impurity component is applied to the exposed active surface whereat a film of the impurity component is adsorbed so as to form a barrier region along the major surface of the semiconductor substrate. A semiconductor device is formed on the major surface of the semiconductor substrate and is protected by the barrier region.