发明名称 |
GROWTH OF METALLIC NANODOTS USING SPECIFIC PRECURSORS |
摘要 |
<p>A technique to form metallic nanodots in a two-step process involving: (1) reacting a silicon-containing gas precursor (101) (e.g., silane) to form silicon nuclei (117) over a dielectric film layer (103B); and (2) using a metal precursor to form metal nanodots where the metal nanodots use the silicon nuclei (117) from step (1) as nucleation points. Thus, the original silicon nuclei (117) are a core material for a later metallic encapsulation step. Metallic nanodots have applications in devices such as flash memory transistors.</p> |
申请公布号 |
WO2008115266(A2) |
申请公布日期 |
2008.09.25 |
申请号 |
WO2007US80214 |
申请日期 |
2007.10.02 |
申请人 |
ATMEL CORPORATION;COPPARD, ROMAIN;BODNAR, SYLVIE |
发明人 |
COPPARD, ROMAIN;BODNAR, SYLVIE |
分类号 |
H01L29/788;H01L21/336 |
主分类号 |
H01L29/788 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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