SEMICONDUCTOR DEVICE AND SEMICONDUCTOR SUBSTRATE, AND THEIR MANUFACTURE

摘要

PURPOSE:To get a light and large diameter semiconductor substrate where defect density is small to a obtain electronic and optical elements and an integrated circuit by using an alkaline halide crystal for the substrate to grow a semiconductor layer. CONSTITUTION:A GaAs layer 2 is grown about 1mum on an NaCl crystal 1 of orientation (100) by molecular beam epitaxy method. The growth temperature is 400-600 deg.C. The dislocation density at the surface of GaAs is about 10<7>/cm<2>, and a high quality of GaAs substrate can be obtained. Also, in the case of making substrates such as AlxGa1-xAs, InP, Inx, Ga1-xAs, InxGa1-xAs1-yPy, etc., as semiconductor layers or in the case of making a substrate which has hetero juntion consisting of these semiconductor layers, the semiconductor substrates can be obtained in a similar way.