| 摘要 |
PURPOSE:To improve a light emitting diode in light extraction efficiency by a method wherein one or more grooves are provided to, at least, each side of a light extracting side face. CONSTITUTION:One or more grooves 125 are provided to, at least, each side of a light extraction side face. That is, a resist layer 123 is formed on the whole face of a wafer on which electrodes 111 are formed in a photolithography process, and the part of the resist layer 123 where the grooves 125 are formed is exposed to light and etched to form etching patterns 121. The wafer is dipped into an etching solution, whereby the part of the wafer where the patterns 121 are formed is etched, and the resist pattern is dissolved to obtain the wafer provided with etched grooves 125. By this setup, the grooves 125 are provided to each side of the upper face of a chip, whereby the chip can be increased in surface area and improved in light extraction efficiency. |
