发明名称 |
Process for Producing an Electroluminescent P-N Junction Made of a Semiconductor Material by Molecular Bonding |
摘要 |
A method for making an electroluminescent PN junction includes molecular bonding a face in a crystalline semiconducting material doped with a first type of a first element with a face in a crystalline semiconducting material doped with a second type opposite to the first type, of a second element, at a bonding interface. The semiconducting material has an indirect forbidden band. The crystalline lattices shown by the faces are shifted in rotation by a predetermined angle so as to at least cause formation of a network of screw type dislocations at the bonding interface.
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申请公布号 |
US2008315213(A1) |
申请公布日期 |
2008.12.25 |
申请号 |
US20060158050 |
申请日期 |
2006.12.26 |
申请人 |
COMMISSARIAT A L'ENERGIE ATOMIQUE |
发明人 |
NOE PIERRE |
分类号 |
H01L29/26;H01L21/00;H01L33/00 |
主分类号 |
H01L29/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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