发明名称 |
Superlattice strain relief layer for semiconductor devices |
摘要 |
A GaN/AlN superlattice is formed over a GaN/sapphire template structure, serving in part as a strain relief layer for growth of subsequent layers (e.g., deep UV light emitting diodes). The GaN/AlN superlattice mitigates the strain between a GaN/sapphire template and a multiple quantum well heterostructure active region, allowing the use of high Al mole fraction in the active region, and therefore emission in the deep UV wavelengths.
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申请公布号 |
US7547925(B2) |
申请公布日期 |
2009.06.16 |
申请号 |
US20060356769 |
申请日期 |
2006.02.17 |
申请人 |
PALO ALTO RESEARCH CENTER INCORPORATED |
发明人 |
WONG WILLIAM S.;KNEISSL MICHAEL A.;YANG ZHIHONG;TEEPE MARK;KNOLLENBERG CLIFF |
分类号 |
H01L27/15;H01L33/04;H01L33/32 |
主分类号 |
H01L27/15 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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