| 摘要 |
<p>PURPOSE:To complete an ohmic contact of a crystalline part formed by data write by shielding a specified part of a region to be amorphous-processed by a shielding body against an impurity diffusion layer interposed between a word line and a lead line and by carrying out ion implantation. CONSTITUTION:A diffusion layer 2 consisting of n<+>-type impurity which is equivalent to a lead line is buried in a surface of a semiconductor substrate 1. After a silicon oxide film 4 and a nitride film 6 are laminated, a loop-like mask layer 7 is applied to a surface of a part wherein a data write cell is formed. Etching treatment is carried out to expose the nitride film 6 corresponding to the mask layer 7. Then, the oxide film 4 which is not covered with the nitride film 6 is made to form, etched, and a surface of the diffusion layer 2 is exposed corresponding to a shape of the nitride film 6. Thereafter, ion implantation is carried out to form an amorphous high-resistance region 3. An ohmic connection is realized by covering the semiconductor substrate 1 excepting a contact part, a passivation, etc. with the silicon oxide film 4 and by stacking a metallic layer 5 thereon which is equivalent to a word line.</p> |
