| 发明名称 |
BUFFER LAYER FOR HIGH PERFORMING AND LOW LIGHT DEGRADED SOLAR CELLS |
| 摘要 |
Methods for forming a photovoltaic device include forming a buffer layer between a transparent electrode and a p-type layer. The buffer layer includes a doped germanium-free silicon base material. The buffer layer has a work function that falls within barrier energies of the transparent electrode and the p-type layer. An intrinsic layer and an n-type layer are formed on the p-type layer. Devices are also provided. |
| 申请公布号 |
US2016204290(A1) |
申请公布日期 |
2016.07.14 |
| 申请号 |
US201615077169 |
申请日期 |
2016.03.22 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
HONG AUGUSTIN J.;HOPSTAKEN MARINUS J.;KIM JEEHWAN;OTT JOHN A.;SADANA DEVENDRA K. |
| 分类号 |
H01L31/0392;H01L31/18;H01L31/07;H01L31/20 |
主分类号 |
H01L31/0392 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for forming a photovoltaic device, comprising:
forming a buffer layer between a transparent electrode and a p-type layer, the buffer layer including a doped germanium-free silicon base material, the buffer layer including a work function that falls within barrier energies of the transparent electrode and the p-type layer, wherein said work function is adjusted by varying the deposition power; and forming an intrinsic layer and an n-type layer on the p-type layer. |
| 地址 |
Armonk NY US |
