| 发明名称 |
LATERAL CHARGE STORAGE REGION FORMATION FOR SEMICONDUCTOR WORDLINE |
| 摘要 |
Devices and methods for forming charge storage regions are disclosed. In one embodiment, a semiconductor device comprises a semiconductor layer having a trench, charge storage layers formed at both side surfaces of the trench, a wordline buried in the trench in contact with the charge storage layers, and source-drain regions formed in the semiconductor layer at both sides of the trench. |
| 申请公布号 |
US2016204280(A1) |
申请公布日期 |
2016.07.14 |
| 申请号 |
US201615048886 |
申请日期 |
2016.02.19 |
| 申请人 |
Cypress Semiconductor Corporation |
发明人 |
Iwase Shin |
| 分类号 |
H01L29/792;H01L27/115;H01L23/522;H01L29/66 |
主分类号 |
H01L29/792 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device, comprising:
a semiconductor layer having a trench; charge storage layers formed at both side surfaces of the trench; a wordline buried in the trench in contact with the charge storage layers; and a plurality of source-drain regions formed in the semiconductor layer at both sides of the trench. |
| 地址 |
San Jose CA US |
