BIPOLAR TRANSISTOR, SEMICONDUCTOR DEVICE, AND BIPOLAR TRANSISTOR MANUFACTURING METHOD

摘要

Disconnection of a base line is suppressed even when a short-side direction of a collector layer is parallel to crystal orientation [011]. A bipolar transistor includes: a collector layer that has a long-side direction and a short-side direction in a plan view, in which the short-side direction is parallel to crystal orientation [011], a cross-section perpendicular to the short-side direction has an inverted mesa shape, and a cross-section perpendicular to the long-side direction has a forward mesa shape; a base layer that is formed on the collector layer; a base electrode that is formed on the base layer; and a base line that is connected to the base electrode and that is drawn out from an end in the short-side direction of the collector layer to the outside of the collector layer in a plan view.

主权项

1. A bipolar transistor comprising:
a sub collector layer formed on a substrate, the sub collector layer having first and second end surfaces, each being perpendicular to crystal orientation [011] and not facing one another, and a third end surface formed between the first and second end surfaces so as to connect the first and second end surfaces, wherein a cross-section perpendicular to the first end surface and a cross-section perpendicular to the second end surface each have a forward mesa shape; a collector layer formed on the sub collector layer and having a long-side direction and a short-side direction in a plan view, wherein the short-side direction is parallel to the crystal orientation [011], one end of an end surface parallel to the long-side direction faces the second end surface, a cross-section perpendicular to the short-side direction has an inverted mesa shape, and a cross-section perpendicular to the long-side direction has a forward mesa shape; a collector electrode formed on the sub collector layer and having a long-side direction and a short-side direction in a plan view, wherein the short-side direction of the collector electrode is parallel to the crystal orientation [011] and an end surface parallel to the short-side direction of the collector electrode faces the third end surface; a base layer formed on the collector layer; a base electrode formed on the base layer; and a base line connected to the base electrode, the base line being drawn out from the one end of the end surface parallel to the long-side direction of the collector layer to the substrate via the second end surface of the sub collector layer.