| 发明名称 |
FINFET WITH REDUCED CAPACITANCE |
| 摘要 |
A method including depositing a gap fill material on top of a conformal dummy gate oxide above and in between a plurality of fins, forming one or more openings between the plurality of fins and the gap fill material by selectively removing a portion of the conformal dummy gate oxide, and forming a gate within the one or more openings, and above the plurality of fins and the gap fill material. |
| 申请公布号 |
US2016204225(A1) |
申请公布日期 |
2016.07.14 |
| 申请号 |
US201615076711 |
申请日期 |
2016.03.22 |
| 申请人 |
International Business Machines Corporation |
发明人 |
Basker Veeraraghavan S.;Cheng Kangguo;Khakifirooz Ali;Koburger, III Charles W. |
| 分类号 |
H01L29/66 |
主分类号 |
H01L29/66 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method comprising:
depositing a gap fill material on top of a conformal dummy gate oxide above and in between a plurality of fins; forming one or more openings between the plurality of fins and the gap fill material by selectively removing a portion of the conformal dummy gate oxide; and forming a gate within the one or more openings, and above the plurality of fins and the gap fill material. |
| 地址 |
Armonk NY US |
