SEMICONDUCTOR DEVICES HAVING CHANNELS WITH RETROGRADE DOPING PROFILE

摘要

A device isolation region is formed, delimiting an active region in a substrate. A word line is formed, extending across the active region and the device isolation region and buried therein. A bit line is formed crossing the word line on the substrate. A channel is formed adjacent the word line, the channel having a retrograde doping profile having a doping concentration that increases away from a top surface of the active region. Formation of the channel includes performing a field ion implantation in the active region having a projected range near a bottom of the device isolation region.

主权项

1. A semiconductor device comprising:
a substrate comprising a device isolation region delimiting an active region; a word line buried in the substrate; a bit line crossing the word line; and a channel in the substrate underlying the word line and having an ion implantation region providing a retrograde doping profile that increases in concentration in a direction away from the word line.