| 主权项 |
1. A semiconductor device structure, comprising;
a substrate, wherein the substrate has at least one active component region and a non-active component region, at least one thin film resistor structure is disposed in the non-active component region, and the at least one thin film resistor structure is spaced from the least one active component region with a specific distance, wherein the at least one thin film resistor structure comprises a plurality of rectangular structures and each of the plurality of rectangular structures sequentially includes an oxide layer and a metal material layer located on the oxide layer, the plurality of rectangular structures includes a first strip resistor structure and a second strip resistor structure, the first and second strip resistor structures are parallel to each other and separate from each other, and the first and second strip resistor structures are electrically connected to each other through metal connection structures, and the metal connection structures are selected from at least two of the group consisting of a wiring structure, a plug and a conductor wire structure, wherein the active component region comprises at least one elongated strip gate structure, and a long side of the thin film resistor structure is parallel to a long side of the at least one elongated strip gate structure. |
