SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

Performance of a semiconductor device is improved without increasing an area size of a semiconductor chip. For example, a source electrode of a power transistor and an upper electrode of a capacitor element have an overlapping portion. In other word, the upper electrode of the capacitor element is formed over the source electrode of the power transistor through a capacitor insulating film. That is, the power transistor and the capacitor element are arranged in a laminated manner in a thickness direction of the semiconductor chip. As a result, it becomes possible to add a capacitor element to be electrically coupled to the power transistor while suppressing an increase in planar size of the semiconductor chip.

主权项

1. A semiconductor device comprising a semiconductor chip where a power transistor and a capacitor element electrically coupled with the power transistor are formed,
wherein the power transistor includes: an source electrode and a drain electrode spaced from each other in a thickness direction of the semiconductor chip; and a gate electrode which controls turning on/off a current flowing between the drain electrode and the source electrode, wherein the capacitor element includes: the source electrode being a lower electrode; a capacitor insulating film formed over the source electrode; and an upper electrode formed over the capacitor insulating film and electrically coupled with the drain electrode, and wherein the source electrode and the upper electrode have an overlapping portion in a plan view.