BACKSIDE PROCESSED SEMICONDUCTOR DEVICE

摘要

A method of forming a semiconductor device includes: providing a first substrate, forming at least one transistor on a first surface of the first substrate; forming a first dielectric cap layer covering the first surface of the first substrate; forming a first interconnect structure on the first dielectric cap layer; providing a carrier substrate; bonding the carrier substrate to the first substrate through the first dielectric cap layer; and from a second surface of the first substrate opposite to the first surface, thinning the first substrate to a second depth.

主权项

1. A method of forming a semiconductor device, the method comprising:
providing a first substrate; from a first surface of the first substrate, forming a shallow trench isolation in the first substrate, the shallow trench isolation having a first depth, the first depth being a distance from a bottom of the shallow trench isolation to the first surface of the first substrate; forming at least one transistor on the first surface of the first substrate; forming a first dielectric cap layer covering the first surface of the first substrate; forming a first interconnect structure on the first dielectric cap layer; providing a carrier substrate; bonding the carrier substrate to the first substrate through the first dielectric cap layer; from a second surface of the first substrate opposite to the first surface, thinning the first substrate to a second depth, the second depth being a distance from the second surface to the first surface of the first substrate after the thinning; forming a second dielectric cap layer on the second surface of the first substrate; and forming a through silicon via (TSV), the TSV running through the second dielectric cap layer, the shallow trench isolation, and the first dielectric cap layer, and connected to the first interconnect structure.