SUBSTRATE PROCESSING METHOD

摘要

A substrate processing method includes forming a first film on the upper surface of the substrate and supplying a first removal liquid to a peripheral edge of said first film to remove a first annular region at the peripheral edge. The method also includes correcting a relative positional relationship between the substrate and a first removal nozzle, forming a second film so as to cover the first film, and supplying a second removal liquid to a peripheral edge of said second film to remove a second annular region at the peripheral edge. The method also includes correcting a relative positional relationship between the substrate and a second removal nozzle so that said second annular region at the peripheral edge of said second film is removed in a predetermined second constant width and carrying the substrate into each of a first and second film formation units by a carry-in device.

主权项

1. A substrate processing method for forming a plurality of films on an upper surface of a substrate before exposure processing by a liquid immersion method, comprising the steps of:
forming a first film on the upper surface of the substrate in a first film formation unit; supplying a first removal liquid to a peripheral edge of said first film from a first removal nozzle in said first film formation unit, to remove a first annular region at the peripheral edge; correcting a relative positional relationship between the substrate and said first removal nozzle so that said first annular region at the peripheral edge of said first film is removed in a predetermined first constant width in said first film formation unit before the removal of said first film; forming a second film so as to cover the first film from which said first annular region is removed in a second film formation unit; supplying a second removal liquid to a peripheral edge of said second film from a second removal nozzle in said second film formation unit, to remove a second annular region at the peripheral edge; correcting a relative positional relationship between the substrate and said second removal nozzle so that said second annular region at the peripheral edge of said second film is removed in a predetermined second constant width in said second film formation unit before the removal of said second film; and carrying the substrate into each of said first and second film formation units by a carry-in device, wherein the step of removing said first annular region includes the steps of:
holding the substrate substantially horizontally;rotating the held substrate around a first axis perpendicular to the substrate; andsupplying said first removal liquid from said first removal nozzle to the peripheral edge of the first film formed on the rotated substrate, to remove said first annular region, the step of removing said second annular region includes the steps of:
holding the substrate substantially horizontally;rotating the held substrate around a second axis perpendicular to the substrate; andsupplying said second removal liquid from said second removal nozzle to the peripheral edge of the second film formed on the rotated substrate, to remove said second annular region, the step of correcting the relative positional relationship between the substrate and said first removal nozzle includes the steps of:
detecting a position of said carry-in device when the substrate is carried into said first film formation unit by said carry-in device; andadjusting the position of said carry-in device on the basis of the detected position, and the step of correcting the relative positional relationship between the substrate and said second removal nozzle includes the steps of:
detecting the position of said carry-in device when the substrate is carried into said second film formation unit by said carry-in device; andadjusting the position of said carry-in device on the basis of the detected position.