| 摘要 |
The purpose of the present invention is to provide a semiconductor device and a manufacturing method thereof. The manufacturing method includes a step of forming a pin structure on a substrate. In the step, for the top of the pin structure to protrude from an isolation insulation layer, the isolation insulation layer is formed. Meanwhile, a gate structure is formed on parts of the pin structure, while an indented part is formed inside the isolation insulation layer, from the two sides of the pin structure. Also, inside the parts of the pin structure, which are not covered by the gate structure, the indented part is formed. In the present invention, the depth (D1) of the indented part inside the pin structure, measured from the top surface of the isolation insulation layer and the depth (D2) of the indented part inside the isolation insulation layer satisfy the formula of 0 <= D1<= D2 (here, D1 and D2 cannot be zero at the same time). By this formula, an indented part inside the pin structure and an indented part inside the isolation insulation layer are formed. |
