发明名称 |
LOW EMISSIVITY SUBSTRATE, AND PREPARATION METHOD THERE OF |
摘要 |
The present invention relates to a low-radiation substrate comprising a crystalline infrared light reflective layer, and a dielectric layer by being surface treated with an electronic beam induced from a plasma; and to a manufacturing method thereof. A surface of a low-radiation substrate manufactured by a sputtering method is treated with an electron beam induced from a plasma, and the manufactured low-radiation substrate includes a crystalline infrared light reflective layer, and a dielectric layer. Thus, the low-radiation substrate according to the present invention has excellent visible ray transmittance, and reflectivity of infrared light. Also, the manufacturing method of a low-radiation substrate can be easily applied to a conventional low-radiation substrate, and can treat a surface having a large area, thereby having economical advantages. |
申请公布号 |
KR101642654(B1) |
申请公布日期 |
2016.07.25 |
申请号 |
KR20150055088 |
申请日期 |
2015.04.20 |
申请人 |
UNIVERSITY OF ULSAN FOUNDATION FOR INDUSTRY COOPERATION |
发明人 |
KIM, DAE IL;JEON, JAE HYUN;GONG, TAE KYUNG;KIM, SO YOUNG;KIM, SEUNG HONG;KIM, SUN KYUNG |
分类号 |
C03C17/34;C03C17/36 |
主分类号 |
C03C17/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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