发明名称 |
METHOD FOR MANUFACTURING DOPANT DOPED SILICON NANO MATERIAL AND LOCAL DOPING METHOD THEREOF |
摘要 |
The present invention relates to a method for preparing a dopant-doped silicon nanomaterial and a method for locally doping the same. The method for preparing a dopant-doped silicon nanomaterial comprises: a mixture powder injecting step of injecting a mixture powder of silicon and a dopant into an inductively-coupled plasma device; a plasma generating step of generating plasma by supplying pulse-type high energy RF power to the inductively-coupled plasma device; an ionizing step of ionizing the mixture powder with the plasma; a step of turning off the pulse-type high energy RF power and spraying a quenching gas when the mixture power is ejected from an inductively-coupled plasma torch in an ionized gas state; and a nanopowder forming step of forming a dopant-doped silicon nanopowder by recrystallizing the ionized mixture powder with the quenching gas. |
申请公布号 |
KR101642271(B1) |
申请公布日期 |
2016.07.25 |
申请号 |
KR20150044900 |
申请日期 |
2015.03.31 |
申请人 |
DCT CO., LTD. |
发明人 |
JU, MIN KYU;CHOI, JANG KUN;KIM, YOUNG KUK |
分类号 |
H01L31/028;B01J19/08;C01B33/021;H01L31/18 |
主分类号 |
H01L31/028 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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