SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

In a thin film transistor of a bottom gate type, a structure of reducing the concentration of an electric field generated between a source electrode and a drain electrode, and restraining the deterioration of switching property, and a manufacturing method. Provided is a thin film transistor of a bottom gate type which has an oxide semiconductor layer on the source electrode and the drain electrode. The lateral angle &thgr;1 of the source electrode touching the oxide semiconductor layer and the lateral angle &thgr;2 of the drain are 20° to 90°. Thereby, a distance from the upper end of an electrode to the lower end of the electrode in the lateral surface of the source electrode and the drain electrode is extended.