| 摘要 |
Some embodiments of the present disclosure relate to a flash memory device. The flash memory device includes first and second individual source/drain (S/D) regions spaced apart within a semiconductor substrate. A common S/D region is laterally arranged between the first and second individual S/D regions, is separated from the first individual S/D region by a first channel region, and is separated from the second individual S/D region by a second channel region. An erase gate is arranged over the common S/D region. A floating gate is disposed over the first channel region, and is arranged to a first side of the erase gate. A control gate is disposed over the floating gate. A word line is disposed over the first channel region, and is spaced apart from the erase gate by the floating gate and the control gate. An upper surface of the word line is a concave surface. |
