Nonvolatile memory device and method for driving the same

摘要

A method for driving a nonvolatile memory device includes performing an erase operation with respect to a plurality of memory cells, stopping the erase operation by a suspend command, calculating a residual time of the erase operation that has not yet been performed, performing a first operation, comparing a first vacant time between a completion time point of the first operation and a start time point of a second operation with the residual time, performing the erase operation that has not yet been performed if the residual time is equal to or shorter than the first vacant time, and performing the second operation if the residual time is longer than the first vacant time.

主权项

1. A method for driving a nonvolatile memory device, comprising:
performing an erase operation with respect to a plurality of memory cells; stopping the erase operation by a suspend command; calculating a residual time of an unperformed erase operation of the erase operation; performing a first operation; comparing a first vacant time between a completion time point of the first operation and a start time point of a second operation with the residual time; and performing the unperformed erase operation if the residual time is equal to or shorter than the first vacant time, and performing the second operation if the residual time is longer than the first vacant time, wherein the calculating the residual time comprises calculating the residual time using erase operation information, and the erase operation information includes at least one of a proceeding degree of the erase operation, a number of memory cells of which the erase operation has been performed, and a number of memory cells having voltages that are equal to or higher than a first voltage among the plurality of memory cells.