GERMANIUM ON INSULATOR SUBSTRATE AND METHODS FOR FORMING THE SAME

摘要

The present invention provides a germanium-on-insulator substrate. The germanium-on-insulator substrate comprises: a bulk silicon substrate; an oxide film disposed on the bulk silicon substrate, and having a first region to expose a part of the bulk silicon substrate; a silicon layer covering a part of the upper side of the oxide film and not covering a part of the first region; a germanium layer coming in contact with the bulk silicon substrate to be exposed through the first region and disposed on the oxide film; and an insulating layer covering the oxide film and the silicon layer, and exposing the upper side of the germanium layer.