Memory device and driving method thereof

摘要

A memory device includes a memory array, a word line driver, and source drivers. The memory array includes memory units. The memory units arranged in the same column are coupled to corresponding bit line. The memory units arranged in the same row are coupled to corresponding word line. The memory units arranged in the rows are divided into N groups, in which N is an integer greater than or equal to 2. The word line driver is configured to selectively enable the word lines. Source drivers are coupled to the memory units in the groups respectively and configured to output N source control signals. When any word line in a first group is enabled, the source control signals corresponding to the first group and a second group of which the sequence for read-write operation is next to the first group are controlled at a select level by corresponding source drivers.

主权项

1. A memory device, comprising:
a memory array, comprising a plurality of memory units arranged in a plurality of rows and at least one column, wherein the memory units arranged in the same column are electrically coupled to a corresponding bit line, the memory units arranged in the same row are electrically coupled to a corresponding word line, and the memory units arranged in the rows are divided into n groups, wherein n is a positive integer greater than or equal to 2; a word line driver configured to selectively enable the word lines; and n source drivers coupled to the memory units in the n groups respectively, configured to output n source control signals, wherein, when any word line in a first group of the n groups is enabled, the source control signals corresponding to the first group and a second group of which the sequence for read-write operation is next to the first group are controlled at a select level by the corresponding source drivers.