| 摘要 |
PURPOSE:To facilitate the formation of ultra fine pattern by a method wherein a film coated with a resin comprising silylated phenolic hydroxyl group is selectively implanted with ion containing fluorine to effect a desilylation reaction so that the selective by ion implanted part may be made alkali-soluble to be selectively removed by alkaline developer. CONSTITUTION:A film coated with a resin comprising silylated phenolic hydroxyl group is selectively implanted with ion containing fluorine to effect a desilylation reaction so that the selective ion implanted part may be made alkali-soluble to be selectively removed by an alkaline developer. That is, when the film coated with the resin comprising silylated phenolic hydroxyl group is selectively implanted with the ion containing fluorine, desilylation is generated to eliminate the silyl group, the ion-implanted coated film part is made alkali- soluble to be easily solved in alkaline developer forming positive type resist pattern. Through these procedures, a resist pattern in ultra fine rule can be easily formed. |
