发明名称 IONIZING RADIATION SENSITIVE NEGATIVE TYPE RESIST MATERIAL COMPOSITION
摘要 PURPOSE:To enhance the sensitivity, definition and dry etching resistance of the resist by incorporating a specific copolymer into the compsn. CONSTITUTION:The copolymer which contains 10 to 85% repeating unit of formula I and 15 to 90% repeating unit of formula II and has 2,000 to 1,000,000 weight average mol. wt. is incorporated into this compsn. In the formula, R1 denotes halogen or 1 to 12C alkyl halide; R2, R3 denote H, halogen, 1 to 12C alkyl halide; R4, R8 denote H or 1 to 3C alkyl; R5 denote H or 1 to 12C alkyl; R6, R7 denote 1 to 12C alkyl. Copolymers of alkyl chloride and para-t-butoxy styrene, etc., are usable as the above-mentioned copolymer.
申请公布号 JPH03148659(A) 申请公布日期 1991.06.25
申请号 JP19890287444 申请日期 1989.11.06
申请人 FUJITSU LTD 发明人 NAMIKI TAKAHISA;SAITO KAZUMASA;OIKAWA AKIRA;WATABE KEIJI
分类号 G03F7/038;H01L21/027 主分类号 G03F7/038
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