| 摘要 |
<p>PURPOSE:To obtain a light shielding film which can be easily formed without degrading the electrical characteristics of a TFT by providing a transparent org. film between the TFT and opaque org. film. CONSTITUTION:This device is constituted of a gate electrode 2 provided on an insulating substrate 1, a gate insulating film 3 provided on the insulating substrate 3, an amorphous semiconductor film 4 provided on the gate insulating film 3, an ohmic contact film 5 provided on the amorphous semiconductor film 4 apart this film, a source electrode 6 and drain electrode 7 provided on the ohmic contact film 5, the transparent org. film 8 provided on the source electrode 6, the drain electrode 7 and the amorphous semiconductor film 4, and the light shielding film 9 which is provided on the transparent org. film 8 and for which the opaque org. film is used. After the transparent org. film 8 of a high resistance is applied on the thin-film transistor (TFT), the opaque org. film 9 is applied thereon and is patterned by exposing. The degradation of the electrical characteristics of the TFT is obviated and the generation of the unequalness at the time of development is obviated as well.</p> |
