| 摘要 |
PURPOSE:To produce the sputtering target which can form thin films having a uniform compsn. by hot pressing a powder mixture composed of elements, such as Ag and Cu, and Te, sintering the molding at the temp. below the eutectic temp., thereby forming a Te alloy having a specific density ratio. CONSTITUTION:The raw material powder is prepd. by mixing >=1 kinds of the elements of Ag, Cu, Au, Zn, Cd, Ga, ln, Tl, Ge, Sn, Pb, As, Sb, Bi, and Se, and the Te. The fluctuation in the compsn. ratio (Te/M atom ratio, M is the above-mentioned element) is preferably set within + or -0.05. The total ratio of the above-mentioned elements is preferably <=55atomic%. The above- mentioned raw material powder is hot pressed in a vacuum, inert gaseous atmosphere or low vacuum. The resulted telluride is heated to the temp. just below the eutectic temp. and is sintered under the pressing pressure lower than the above-mentioned hot pressing pressure. Thus, the sputtering target which consists of the Te alloy and is set at 60 to 95% density ratio and within + or -1.0% fluctuation in the density ratio is obtd.. The recording medium thin film for optical disks having the prescribed compsn. is stably and continuously formed by using such target. |
