发明名称 POTENTIOMETRIC SENSOR
摘要 PURPOSE:To obtain the small-sized, inexpensive sensor which is easily handled and has superior characteristics by forming a 1st and a 2nd titanium nitride film on an electrode support base material, using the 1st titanium nitride film as a potential detection electrode, and covering the 2nd titanium nitride film with an organic high polymer film and using it as a reference electrode. CONSTITUTION:On an insulating substrate (electrode support base material) 2, the 1st titanium nitride film 3 and 2nd titanium nitride film 4 are provided successively. On the insulating substrate 2, an insulating film 5 is further formed and the titanium films 3 and 4 are coated except an H<+> selection electrode part 3a, a reference electrode part 4a, and connection parts 3b and 4b. The high polymer film 6 is formed on the reference electrode part 4a. Then this sensor 1 is mounted directly on a connector (c) and connected to a measuring circuit. Consequently, the structure is simplified and the manufacture process is facilitated to facilitate size reduction, cost reduction, and mass-production. Further, variance in characteristics among sensors is reduced because of the simple structure.
申请公布号 JPH03162660(A) 申请公布日期 1991.07.12
申请号 JP19890302888 申请日期 1989.11.21
申请人 OMRON CORP 发明人 NAKAJIMA SATOSHI;TAKIZAWA KOICHI;ARAI MASATO;ENDO HIDEKI
分类号 G01N27/28;G01N27/26;G01N27/30;G01N27/327;G01N27/333;G01N27/36 主分类号 G01N27/28
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