| 摘要 |
PURPOSE:To obtain an X-ray absorber thin film pattern having high density, stable stress and accurate miniaturization by forming an X-ray transmitting thin film on a mask support, forming the absorber film thereon, and oxidizing the thin film before, during or after patterning. CONSTITUTION:An SiC film 12 is deposited on an Si substrate 11 having completed cleaning its front surface mask, an SiC board 13 is deposited on the rear, and an opening is formed at the center. Then, a W film (X-ray absorption film) 15 is deposited on the film 12, and plasma oxidized. Then, with the opening of the film 13 as a mask the rear of the substrate 11 is etched. Thereafter, resist 14 is plotted on the film 14 to form a desired pattern. With the pattern as a mask the film 14 is anisotropically etched to be patterned. In this case, a gas entrance preventive film containing carbon as a main ingredient is formed on the sidewall of the film 14 with carbon compound mixed in etching gas. Eventually, the mask SiC on the rear is removed by reactive ion etching. |
