| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a multilayer type semiconductor device which is reducible in manufacturing cost and has high performance, and to provide a method of manufacturing the same. <P>SOLUTION: The multilayer type semiconductor device has: a first semiconductor element 1 including an electrode formation surface where a first electrode pad 12 is formed; a second semiconductor element 2 including an electrode formation surface where a second electrode pad 22 is formed and laminated on the first semiconductor element 1 such that the electrode formation surfaces face each other; a first stud bump 13 provided to the first electrode 12; and a second stud bump 23 provided to the second electrode pad 22, wherein the first stud bump 13 and second stud bump 23 are connected to each other directly or through a metal wiring portion 16 being a wiring portion. <P>COPYRIGHT: (C)2010,JPO&INPIT |
