| 摘要 |
1,222,251. Strain-sensitive semi-conductor device. THOMSON-C.S.F. 11 March, 1968 [15 March, 1967], No. 11852/68. Heading HlK. [Also in Division G1] A strain gauge consists of a pair of seriesconnected field effect transistors built in a common monocrystalline semi-conductor body, the source-drain current paths of the transistors being disposed respectively parallel and perpendicular to a crystallographic axis of the body. A typical construction comprising an N type silicon layer epitaxially grown on a weakly P type substrate is shown in Fig. 2, the current path of transistor A lying along a <100> crystal axis. In operation a tensile or compressile stress is applied along this axis. The channels of the transistors form adjacent arms of a Wheatstone bridge which is balanced at zero stress. One transistor has its gate and source strapped together while the gate of the other is reverse biased. |
