| 摘要 |
1,244,619. Sputtering apparatus. HEWLETT PACKARD CO. Dec. 13, 1968 [Feb. 1, 1968], No.9771/71. Divided out of 1,244,618. Heading C7F. A triode sputtering apparatus comprises an anode 40 and cathode 42 preferably circular and parallel to one another, an electron emitting filament 48 between the anode and cathode, and a callector 56 positioned around the filament and radially spaced therefrom a selected distance. The inert gas presence in the apparatus is preferably adjusted so that the mean free path of the electrons is at least 50% e.g. Π10% of the distance between filament and collector and the distance between anode and cathode is +100% - 50% of the mean free path. The filament is rotatable about an axis perpendicular to the anode and cathode and a water cooled cylindrical shield 52 with an annular opening 54 is coaxially supported round the filament. In the deposition of layers of Mo, Mo + Au and an outer layer of Au or a Si substrate 46 see Specification 1,244,618 the cathode 42 has one half 62% Au and the other half 64% Mo. A shield 66 is used to cover the appropriate half during sputtering. |
