| 摘要 |
PURPOSE:To suppress a decrease in an open voltage when an i-type layer film is thin and to improve conversion efficiency by forming an i-type layer on a p-type layer on a substrate, exposing the surface of the i-type layer during hydrogen gas discharging, and then laminating an n-type layer. CONSTITUTION:A transparent texture electrode 21 made of an SnO2 and having a large scattering degree is formed on a glass board 1, a p-type layer 3 made of an a-SiC is formed therein, then a p/i boundary layer 8 made of i-type quality a-SiC is deposited therein, and further an i-type a-Si layer 4 is deposited thereon. After hydrogen discharging is conducted, an n-type layer 5 is deposited, an Ag film is further formed, and a rear surface electrode 6 is formed. Thus, a decrease in an open voltage due to the defect of the layer 4 generated when a solar cell having the relatively thin p-i-na-Si layer of the layer 5 is formed on the electrode 21 having a vigorously uneven surface and a large scattering degree can be suppressed by hydrogen discharging the layer 4 before the layer 5 is deposited. Thus, the decrease in the open voltage when the i-type layer is thin can be suppressed to improve conversion efficiency. |
