| 摘要 |
PURPOSE:To prevent an Si substrate from being damaged due to press-contact of a protecting film with a bonding wire by preventing the bonding wire from coming into contact with the protecting film of a pad electrode peripheral part when the bonding wire made of gold, etc., is bonded to the pad electrode. CONSTITUTION:The surface of an Si substrate 1 is selectively etched so as to form, for example, a mesa bonding pad forming area which is 1-2mum in height and a silicon oxide film 2 is formed on the surface which includes the bonding pad forming area. Then, an aluminum layer is deposited on the silicon oxide film 2, the layer is selectively etched and a pad electrode 3 is formed on the top plane and the inclining plane of the mesa bonding forming area. The silicon oxide film 4 is deposited on the surface which includes the pad electrode 3, the film is selectively etched in order to open the center of the pad electrode 3 and the peripheral part of the pad electrode 3 is protected. Since the edge part of the silicon oxide film which protects the peripheral part of the pad electrode 3 is provided at the bottom part of the mesa area, the press-contact of the bonding line with the edge part of the silicon oxide film 4 is prevented. |
