| 摘要 |
PURPOSE:To prevent mutual diffusion of impurities contained in gates, by isolating silicide of gate upper layers of two MOSFET's constituting a CMOSFET by using an intermediate connection part of the gates of the respective MOSFET's. CONSTITUTION:On a P-type semiconductor substrate, an N-well 2 is formed for a P-channel MOS transistor(MOST) region 1. An adjacent P-type substrate region is for an N-channel MOST 3. In order to make both channel regions a CMOST constitution, the same polycrystalline Si layers are stretched and made input gates. Titanium silicide is formed on the upper layers of the regions turning to, at least, a first gate electrode 4 of the MOST 1 part and a second gate electrode 5 of the MOST 2 part out of the input gate polycrystalline silicon. Thus gate electrodes of polycide structure is constituted. An input Al wiring 6 is connected to the contact point (common gate input contact part 7) of electrodes 4, 5. Said contact part 7 is made a boundary, and the upper layer silicide of the electrodes 4, 5 is isolated and formed. |
