发明名称 MANUFACTURE OF VAPOR-PHASE REACTION FILM
摘要 PURPOSE:To prevent the back flow of atmosphere from an exhaust system into a reaction container in the manufacture of a non-oxygen-based film by providing a continuous exhaustion type turbo-molecular pump(TP) between the reaction container and a discontinuous-rotation type vacuum pump(VP). CONSTITUTION:Gate valves 44-47 are provided between each of reaction containers and a buffer chamber 102. Feeding nozzles 17 and 18 for reactive gas and exhaust nozzles 17' and 18' are provided in each reaction container. A holder 3 in which a substrate 1 is inserted is arranged in a first reserve chamber 100 at the input side. The gate valves are closed when a door is opened and opened when the inside of the reverse chamber 100 is evacuated. The substrate is moved into the neighboring chamber. For example, P-I-N type semiconductor layers are sequentially laminated by plasma vapor-phase reaction in each evacuated reaction chamber. The chambers are evacuated with VPs 34-37 through TPs 86-89. For example, in the reaction system l, a pressure adjusting valve 72 is closed, and the pressure in the reaction chamber 101 becomes 0.05-1Torr, or the pressure beneath the valve becomes 1X10<-2>Torr or less. The back flow of oxygen impregnated in the oil in the VP can be prevented by the operation of the TP.
申请公布号 JPH03209719(A) 申请公布日期 1991.09.12
申请号 JP19900165026 申请日期 1990.06.22
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 YAMAZAKI SHUNPEI
分类号 C23C16/50;C23C16/26;C23C16/54;H01L21/205;H01L21/31;H01L31/04 主分类号 C23C16/50
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