| 摘要 |
A data storage cell in a matrix of storage cells is connected to a data input/output line (or between data input/output lines) for a plurality of the data cells. During a recurring write interval, a write field effect transistor is turned on for applying a voltage potential representing a logic state to a storage capacitor from the input/output line. During a recurring precharge interval, the data line is restored to a first voltage level. During a recurring read interval, a bootstrapped field effect transistor driver is turned on (or not) by the voltage stored on the capacitor for driving a read transistor. The bootstrapped drive provides a relatively high drive voltage on the gate electrode of the read field effect transistor when the bootstrapped driver is turned on. The stored voltage (data) is inverted in the storage cell by the conduction or nonconduction of the read field effect transistor and is provided as an output on the data line. The inverted data is reinverted and rewritten into the storage cell during the recurring write interval of a data refresh cycle following the read/write cycle. If new data is to be stored, the old data is blocked and the new data is written into the data cell.
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