| 发明名称 |
FORMATON METHOD OF INSULATOR THIN FILM |
| 摘要 |
PURPOSE:To form the insulator film in the relatively low temperature and to obtain the desired resistance value of the oxide film by controlling the gas concentration at the time of formation of oxide film. |
| 申请公布号 |
JPS5216170(A) |
申请公布日期 |
1977.02.07 |
| 申请号 |
JP19750091908 |
申请日期 |
1975.07.30 |
| 申请人 |
HITACHI LTD |
发明人 |
MIYAZAKI TAKAO;KETSUSAKO MITSUNORI;NAKAMURA NOBUO;TAMURA HIROSHI;MARUYAMA EIICHI |
| 分类号 |
H01L29/78;C23C16/40;H01L21/316;H01L21/768;H01L31/10 |
主分类号 |
H01L29/78 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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