| 摘要 |
PURPOSE:To prevent evaporation of P from the surface of a semiconductor crystal when an insulating phosphoryl nitride film is to be formed on a semiconductor InP crystal by a method wherein formation thereof is performed in an atmosphere containing P. CONSTITUTION:After a semiconductor crystal 12 consisting of an InP crystal is set in a reaction tube 10, the surface of the crystal 12 is cleaned by making H2 gas contaoning HCl gas to flow from a gas source 4. Then after the inside of the reaction tube 10 is replaced with H2 gas containing PH3 gas supplied from a gas source 3, the crystal 12 is heated by a heat source 11. At this case, evaporation of P from the surface of the crystal 12 is suppressed by existence of PH3 gas. Then after supply of gas from the gas source 3 is cut, NH3 gas and POCl3+H2 gas are supplied from a gas source 1 and a gas source 2. Accordingly a vapor phase reaction of gases mentioned above is performed in the reaction tube 10, and as a result, an insulating phosphoryl nitride film 13 is formed on the semiconductor crystal 12. |
