SEMICONDUCTOR INTEGRATED CIRCUIT FOR DRIVING THERMAL HEAD

摘要

PURPOSE:To make the low output voltage small and reduce the distribution thereof by providing the first half-stage transistor of a Darlington transistor in the vicinity of the bonding pad. CONSTITUTION:The first half-stage Tr 107 of a Darlington transistor Tr is placed in the vicinity of a bonding pad 17 for connecting the second half-stage Tr 111 of the Darlington Tr with a heating resistor. Whereupon, the distance of a buried layer 7 from an emitter diffusion layer 4 to a collector power supply 14 becomes short. With this the low output voltage becomes small, the the distribution thereof is reduced accordingly.