| 摘要 |
PURPOSE:To prevent the invasion of stray light to the surface of a photoelectric conversion element, and to improve the damp-proofing of a solid-state image pickup device by forming a polyimide layer as a passivation layer and shaping an amorphous silicon layer or an amorphous silicon carbide layer on the polyimide layer. CONSTITUTION:In a solid-state image pickup device in which a plurality of photoelectric conversion elements constituted of photoconductive thin-films 103 are arranged on a transparent insulating substrate 101, a polyimide layer 105 is formed as a passivation layer, and an amorphous silicon layer or an amorphous silicon carbide layer 106 is shaped onto the polyimide layer 105. Consequently,the scattering intensity of non-imaging beams can be attenuated, and the dispersion of outputs among a plurality of the photoelectric conversion elements can be reduced. The damp-proofing of the solid-state image pickup device is improved because moisture does not penetrate the amorphous silicon carbide layer, and the polyimide layer and the amorphous silicon layer are laminated one upon another, thus enhancing both damp-proofing and ion resistance.
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