发明名称 SEMICONDUCTOR LASER
摘要 PURPOSE:To obtain a recording and regenerating beam and an elliptic erasing beam, by crossing direct polarization planes of at least two laser light beams among laser light beams, which are emitted from two or more light emitting surfaces at a right angle, and splitting the two light beams by deflection beam splitters. CONSTITUTION:Two light emitting surfaces 20a and 20b are provided in a multiple laser chip 20 of a semiconductor laser. Light beams 21a and 21b having the same wavelength and the same spreading angle are emitted. A lambda/2-wavelength plate 22 is formed at the end surface of the light emitting surface 20b. The polarizing plane of the beam 21b, which is emitted from the light emitting surface 20b, is rotated by 90 deg. so that the beam 21a and the polarizing plane are crossed at a right angle. The light beam 21a from the multiple semiconductor laser 20 is emitted in the deflection pattern of S. The light beam 21b is emitted in the deflection pattern of P. The beams are processed through first and second beam splitters 25 and 28 and the like. Thus a circular recording and regenerating beam and an elliptic erasing beam are obtained.
申请公布号 JPS6318684(A) 申请公布日期 1988.01.26
申请号 JP19860164009 申请日期 1986.07.11
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 GOTO YOSHIKAZU
分类号 G11B7/125;H01S5/00 主分类号 G11B7/125
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