发明名称 |
Erasable electrically programmable read only memory cell using trench edge tunnelling |
摘要 |
An electrically programmable read only memory cell formed in a face of a semiconductor substrate which includes a floating gate transistor having a floating gate and a control gate formed at least partially in a trench in the substrate. The trench has bottom corners sufficiently sharp so as to enhance the likelihood of tunnelling between corner regions of the trench and the floating gate over that between planar surface regions of the trench and floating gate.
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申请公布号 |
US4975384(A) |
申请公布日期 |
1990.12.04 |
申请号 |
US19880217183 |
申请日期 |
1988.07.11 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
BAGLEE, DAVID A. |
分类号 |
G11C16/04;H01L21/28;H01L29/788 |
主分类号 |
G11C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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