| 摘要 |
<p>PURPOSE:To micronize it and also to enable high-speed operation by making the control gate electrode of a memory transistor and the selective gate electrode of a selective transistor common. CONSTITUTION:This has a memory transistor 6 and a selective transistors 3 being arranged in matrix shape on the semiconductor substrate of first conductivity type. And a tunnel region 8 and a lead transistor region 10 are made, shearing the polycrystalline semiconductor upper layer of a floating gate electrode 14 and a selective gate electrode 4 formed through an interlayer insulating film and separating the lower layer electrically with an element isolating field oxide film 18. That is, since a memory transistor 6 and a selective transistor 3 are made continuously, separation allowance and a connection impurity diffusion layer can be omitted. Hereby, micronization becomes possible, and they can be integrated highly, and at the same time the increase of the channel resistance by the connection impurity diffusion layer can be suppressed, and an element capable of high speed operation can be obtained.</p> |
